VS-FC220SA20 Datasheet, PDF (7/10 Pages) Vishay Siliconix – Easy to use and parallel

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10V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 19 a - Basic Gate Charge Waveform
VS-FC220SA20
Vishay Semiconductors
Current regulator
Same type as D.U.T.
12 V
50 KW
.2 µF
.3 µF
D.U.T.
+
- ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 19 b - Gate Charge Test Circuit
D.U.T.
+
2
-
1
R_G
+
Circuit layout considerations
• Low stray inductance
3
• Ground plane
• Low leakage inductance
current transformer
-
- ⁴+
• dV/dt controlled by R_G
• Driver same type as D.U.T.
• I_SD controlled by duty factor "D"
• D.U.T. - Device under test
+
- ^VDD
Fig. 19 c - Peak Diode Recovery dV/dt Test Circuit
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
V_GS=10V _*
D.U.T. I_SD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. V_DS Waveform
Diode Recovery
dv/dt
V_DD
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
I_SD
* V_GS = 5V for Logic Level Devices
Fig. 20 - For N-Channel Power MOSFETs
Revision: 01-Jun16
7
Document Number: 94846
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