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| VS-FC220SA20 Datasheet, PDF (2/10 Pages) Vishay Siliconix – Easy to use and parallel | |||
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www.vishay.com
VS-FC220SA20
Vishay Semiconductors
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction and storage temperature range
Junction to case
Case to heatsink
Weight
TJ, TStg
RthJC
RthCS
Flat, greased surface
Mounting torque
Torque to terminal
Torque to heatsink
Case style
MIN.
-55
-
-
-
-
-
TYP. MAX. UNITS
-
175
°C
-
0.19
0.05
-
°C/W
30
-
g
- 1.1 (9.7) Nm (lbf.in)
- 1.3 (11.5) Nm (lbf.in)
SOT-227
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Static drain to source on-resistance
V(BR)DSS
ïV(BR)DSS/ïTJ
RDS(on) (1)
Gate threshold voltage
VGS(th)
Forward transconductance
gfs
Gate resistance, internal
Rg
Drain to source leakage current
IDSS
Gate to source forward leakage
Gate to source reverse leakage
IGSS
Total gate charge
Qg
Gate to source charge
Qgs
Gate to drain ("Miller") charge
Qgd
VGS = 0 V, ID = 1.0 mA
Reference to 25 °C, ID = 1.0 mA
VGS = 10 V, ID = 150 A
VDS = VGS, ID = 500 μA
VDS = VGS, ID = 500 μA, TJ = 125 °C
VDS = 20 V, ID = 150 A
VDS = 200 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VDS = 200 V, VGS = 0 V, TJ = 175 °C
VGS = 20 V
VGS = -20 V
ID = 150 A,ï
VDS = 100 V,ï
VGS = 10 V,ï
see fig.15 and fig.19 (1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDD = 120 V,ï
ID = 150 A,ï
Rg = 5ï ï,ï
L = 500 μH,ï
diode used: 20CZU02
VDD = 120 V,ï
ID = 150 A,ï
Rg = 5ï ï,ï
L = 500 μH,ï
TJ = 125 °C,ï
diode used: 20CZU02
Internal source inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
LS
Ciss
Coss
Crss
Between lead, and center of die contact
VGS = 0 V,ï
VDS = 50 V,ï
f = 1.0 MHz,ï
see fig.14
Drain to case capacitance
Cd-cs
VGS = 0 V, (G-S shortened); f = 1 MHz
MIN.
200
-
-
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.21
4.8
4
2.5
385
2
1
40
2
-
-
350
120
110
360
245
205
220
350
243
210
175
5
21 000
1600
320
43
MAX.
-
-
7.0
5.1
-
-
-
50
1000
10
250
-250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
V
V/°C
mï
V
S
ï
μA
mA
nA
nC
ns
ns
nH
pF
Revision: 01-Jun16
2
Document Number: 94846
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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