VS-FC220SA20 Datasheet, PDF (3/10 Pages) Vishay Siliconix – Easy to use and parallel

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VS-FC220SA20
Vishay Semiconductors
SOURCE-DRAIN RATINGS AND CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
Continuous source current (body diode)
Pulsed source current (body diode)
I_S
I_SM ⁽¹⁾
Diode forward voltage
V_SD ⁽²⁾
Reverse recovery time
t_rr
Reverse recovery current
I_rr
Reverse recovery charge
Q_rr
Reverse recovery time
t_rr
Reverse recovery current
I_rr
Reverse recovery charge
Q_rr
Forward turn-on time
t_on
MOSFET symbol showing the integral
reverse p-n junction diode
-
-
220
-
-
520
T_J = 25 °C, I_S = 150 A, V_GS = 0 V
-
0.87
1.0
T_J = 125 °C, I_S = 150 A, V_GS = 0 V
T_J = 175 °C, I_S = 150 A, V_GS = 0 V
-
0.75
-
-
0.70
-
T_J = 25 °C, I_F = 50 A, dI_F/dt = 100 A/μs, 
V_R = 100 V ⁽²⁾
-
170
-
-
12
-
-
1060
-
-
200
-
T_J = 125 °C, I_F = 50 A, dI_F/dt = 100 A/μs, 
V_R = 100 V ⁽²⁾
-
15
-
-
1550
-
Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
Notes
(1) _{Repetitive rating; pulse width limited by maximum junction temperature.}
(2) _{Pulse width  300 μs, duty cycle  2 %ï€} 
UNITS
A
V
ns
A
nC
ns
A
nC
180
160
140
DC
120
100
80
60
40
20
0
0
50
100 150 200 250
I_DS - Continuous Drain-Source Current (A)
Fig. 1 - Maximum DC MOSFET Drain-Source Current vs.
Case Temperature
300
275
250
225
200
175
150
125
100
75
50
25
0
0
V_GS = 15 V
V_GS = 12 V
V_GS = 10 V
V_GS = 8 V
V_GS = 7 V
V_GS = 6 V
0.5
1
1.5
2
V_DS - Drain-to-Source Voltage (V)
Fig. 3 - Typical Drain-to-Source Current Output Characteristics,
at T_J = 25 °C
T_J = 125 °C
100
T_J = 25 °C
10
T_J = 175 °C
1
0.1
0.01
0.10
1.00
10.00
V_DS - Drain-to-Source Voltage (V), at V_GS = 10 V
Fig. 2 - Typical Drain-to-Source Current Output Characteristics,
V_GS = 10 V
300
275
250
225
200
175
150
125
100
75
50
25
0
0
V_GS = 15 V
V_GS = 12 V
V_GS = 10 V
V_GS = 8 V
V_GS = 7 V
V_GS = 6 V
0.5 1 1.5 2 2.5 3 3.5
V_DS - Drain-to-Source Voltage (V)
Fig. 4 - Typical Drain-to-Source Current Output Characteristics,
at T_J = 125 °C
Revision: 01-Jun16
3
Document Number: 94846
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