VS-FC220SA20 Datasheet, PDF (4/10 Pages) Vishay Siliconix – Easy to use and parallel

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300
275
250
225
200
175
150
125
100
75
50
25
0
0
V_GS = 15 V
V_GS = 12 V
V_GS = 10 V
V_GS = 8 V
V_GS = 7 V
V_GS = 6 V
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V_DS - Drain-to-Source Voltage (V)
Fig. 5 - Typical Drain-to-Source Current Output Characteristics,
at T_J = 175 °C
20
I_DS = 150 A
V_GS = 10 V
15
10
5
0
0 20 40 60 80 100 120 140 160 180
T_J - Junction Temperature (°C)
Fig. 6 - Typical Drain-to-Source On-Resistance vs. Temperature
280
240
200
160
T_J = 175 °C
120
80
T_J = 125 °C
40
T_J = 25 °C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_FSD - Drain to Source Forward Voltage Drop Characteristics (V)
Fig. 7 - Typical Body Diode Forward Voltage Drop Characteristics
VS-FC220SA20
Vishay Semiconductors
200
180
160
140
120
100
T_J = 175 °C
80
T_J = 125 °C
60
40
20
T_J = 25 °C
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V_GS - Gate-to-Source Voltage (V)
Fig. 8 - Typical MOSFET Transfer Characteristics
10
1
T_J = 175 °C
0.1
0.01
0.001
0.0001
T_J = 125 °C
T_J = 25 °C
1E -05
0 20 40 60 80 100 120 140 160 180 200 220
V_DS - Drain-to-Source Voltage (V)
Fig. 9 - Typical MOSFET Zero Gate Voltage Drain Current
5
4.5
4
T_J = 25 °C
3.5
3
2.5
T_J = 125 °C
2
1.5
1
0.5
0
0.20 0.40 0.60 0.80 1.00 1.20
I_D (mA)
Fig. 10 - Typical MOSFET Threshold Voltage
Revision: 01-Jun16
4
Document Number: 94846
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