VS-FC220SA20 Datasheet, PDF (5/10 Pages) Vishay Siliconix – Easy to use and parallel

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1
t_d(off)
0.1
t_d(on)
t_r
t_f
VS-FC220SA20
Vishay Semiconductors
t_d(on)
1
t_d(off)
t_r
t_f
0.1
0.01
20 40 60 80 100 120 140 160
I_DS - Drain-to-Source Current (A)
Fig. 11 - Typical MOSFET Switching Time vs. I_DS,
T_J =125 °C, V_DD = 120 V, V_GS = 10 V, L = 500 μH, R_g = 5 
Diode Used: 20CZU02
1
0.01
0
10 20 30 40 50 60
R_g (Ω)
Fig. 12 - Typical MOSFET Switching Time vs. R_g,
T_J =125 °C, I_DS = 150 A, V_DD = 120 V, V_GS = 10 V, L = 500 μH
Diode Used: 20CZU02
0.1
0.01
0.001
0.00001
0.0001
D = 0.75
D = 0.50
D = 0.25
D = 0.1
D = 0.05
D = 0.02
DC
0.001
P
DM
t
1
t
2
Notes:
1. Duty factor D = t_1./t₂
2. Peak T_J = P_DM x Z_thJC + T_C.
0.01
0.1
1
Rectangular Pulse Duration (s)
Fig. 13 - Maximum Thermal Impedance Z_thJC Characteristics, MOSFET
25 000
22 500
C_iss (pF)
20 000
17 500
15 000
12 500
10 000
V_GS = 0 V; f = 1 MHz
C_iss = C_gs + C_gd; C_{ds shorted}
C_rss = C_gd
C_oss = C_ds + C_gd
7500
5000
2500
C_oss (pF)
C_rss (pF)
0
1
10
100
V_DS - Drain-to-Source Voltage (V)
Fig. 14 - Typical Capacitance vs. Drain-to-Source Voltage
16
I_D = 150 A
14
12
V_DS = 40 V
10
V_DS = 100 V
8
6
V_DS = 160 V
4
2
0
0 40 80 120 160 200 240 280 320 360 400
Q_g - Total Gate Charge (nC)
Fig. 15 - Typical Gate Charge vs. Gate-to-Source Voltage
Revision: 01-Jun16
5
Document Number: 94846
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