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| SI8416DB Datasheet, PDF (7/9 Pages) Vishay Siliconix – N-Channel 8 V (D-S) MOSFET | |||
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Si8416DB
Vishay Siliconix
Duty Cycle = 0.5
0.2
0.1
0.1
0.01
10-4
1
Notes:
0.05
0.02
Single Pulse
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 63716
www.vishay.com
S11-2526-Rev. A, 26-Dec-11
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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