SI8416DB Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 8 V (D-S) MOSFET

Si8416DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
10
V_GS = 5 V thru 1.5 V
8
15
6
10
T_C = 25 °C
4
5
0
0.0
0.10
0.08
V_GS = 1 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
V_GS = 1.2 V
0.06
0.04
V_GS = 1.8 V
V_GS = 1.5 V
0.02
0.00
0
V_GS = 2.5 V
V_GS = 4.5 V
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
I_D = 1.5 A
4
V_DS = 4 V
3
V_DS = 2 V
2
V_DS = 6.4 V
1
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
2
T_C = 125 °C
T_C = - 55 °C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2400
2000
C_iss
1600
1200
800
400
C_oss
C_rss
0
0
2
4
6
8
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.4
1.3
V_GS = 4.5 V, 2.5 V, 1.8 V; I_D = 1.5 A
1.2
V_GS = 1.5 V; I_D = 0.5 A
1.1
1.0
V_GS = 1.2 V; I_D = 0.5 A
0.9
0.8
0.7
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Document Number: 63716
4
S11-2526-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000