SI8416DB Datasheet, PDF (6/9 Pages) Vishay Siliconix – N-Channel 8 V (D-S) MOSFET

Si8416DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
24
15
20
12
16
Package Limited
9
12
6
8
3
4
0
0
0
25
50
75
100 125 150
25
T_C - Ambient Temperature (°C)
Current Derating*
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
Document Number: 63716
6
S11-2526-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000