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SI8416DB Datasheet, PDF (2/9 Pages) Vishay Siliconix – N-Channel 8 V (D-S) MOSFET
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Si8416DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)c
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 85 °C/W.
c. Case is defined as top surface of the package.
Steady State
Symbol
RthJA
RthJC
Typical
37
7
Maximum
45
9.5
Unit
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
Zero Gate Voltage Drain Current
IDSS
VDS = 8 V, VGS = 0 V
VDS = 8 V, VGS = 0 V, TJ = 70 °C
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 1.5 A
VGS = 2.5 V, ID = 1 A
Drain-Source On-State Resistancea
RDS(on)
VGS = 1.8 V, ID = 1 A
VGS = 1.5 V, ID = 0.5 A
VGS = 1.2 V, ID = 0.5 A
Forward Transconductancea
gfs
VDS = 4 V, ID = 1.5 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 4 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = 4 V, VGS = 4.5 V, ID = 1.5 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
VGS = 0.1 V, f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 4 V, RL = 2.7 Ω
ID ≅ 1.5 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Min.
8
0.35
5
Typ.
2.2
- 2.7
0.019
0.021
0.023
0.027
0.040
22
Max.
0.80
± 100
1
10
0.023
0.025
0.030
0.040
0.095
Unit
V
mV/°C
V
nA
µA
A
Ω
S
1470
580
pF
450
17
26
1.8
nC
3.4
2.5
Ω
13
25
15
30
ns
40
80
10
20
www.vishay.com
Document Number: 63716
2
S11-2526-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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