SI8416DB Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel 8 V (D-S) MOSFET

N-Channel 8 V (D-S) MOSFET
Si8416DB
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) Max.
0.023 at V_GS = 4.5 V
0.025 at V_GS = 2.5 V
8
0.030 at V_GS = 1.8 V
0.040 at V_GS = 1.5 V
0.095 at V_GS = 1.2 V
I_D (A)^d
16
16
16
15
3
Q_g (Typ.)
17 nC
MICRO FOOT
Bump Side View
Backside View
S
G
2
1
S
S
3
6
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Ultra-small 1.5 mm x 1 mm Maximum Outline
• Ultra-thin 0.59 mm Maximum Height
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Low On-Resistance Load Switch for Portable Devices
- Low Power Consumption, Low Voltage Drop
- Increased Battery Life
- Space Savings on PCB
D
D
D
4
5
Device Marking: 8416
xxx = Date/Lot Traceability Code
Ordering Information:
Si8416DB-T2-E1 (Lead (Pb)-free and Halogen-free)
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
8
V
V_GS
±5
T_C = 25 °C
16^e
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
16^e
9.3^{a, b}
T_A = 70 °C
7.4^{a, b}
A
Pulsed Drain Current (t = 300 µs)
I_DM
20
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
11
2.3^{a, b}
Maximum Power Dissipation
T_C = 25 °C
13
T_C = 70 °C
T_A = 25 °C
P_D
8.4
2.77^{a, b}
W
T_A = 70 °C
1.77^{a, b}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Package Reflow Conditions^c
IR/Convection
260
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. Case in defined as the top surface of the package.
e. T_C = 25 °C package limited.
Document Number: 63716
www.vishay.com
S11-2526-Rev. A, 26-Dec-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000