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SI5515DC Datasheet, PDF (7/8 Pages) Vishay Siliconix – Complementary 20-V (D-S) MOSFET
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Si5515DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
P-CHANNEL
Single Pulse Power
0.3
40
ID = 250 mA
0.2
30
0.1
20
0.0
10
−0.1
−0.2
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
10−4 10−3
10−2 10−1
1
Time (sec)
Safe Operating Area
100
rDS(on) Limited
IDM Limited
10
P(t) = 0.0001
10 100 600
1
0.1
0.01
0.1
ID(on)
Limited
TA = 25_C
Single Pulse
BVDSS Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
1
10
100
VDS − Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1 0.05
0.02
0.01
10−4
Single Pulse
10−3
Document Number: 72221
S-41167—Rev. B, 14-Jun-04
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
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