SI5515DC Datasheet, PDF (1/8 Pages) Vishay Siliconix – Complementary 20-V (D-S) MOSFET

Si5515DC
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
N-Channel
20
P-Channel
−20
0.040 @ V_GS = 4.5 V
0.045 @ V_GS = 2.5 V
0.052 @ V_GS = 1.8 V
0.086 @ V_GS = −4.5 V
0.121 @ V_GS = −2.5 V
0.171 @ V_GS = −1.8 V
1206-8 ChipFETr
I_D (A)
5.9
5.6
5.2
−4.1
−3.4
−2.9
FEATURES
D TrenchFETr Power MOSFETS
D Ultra Low r_DS(on) and Excellent Power
Handling In Compact Footprint
APPLICATIONS
D Load Switching for Portable Devices
D₁
S₂
1
S₁
D₁
G₁
D₁
S₂
D₂
G₂
D₂
Bottom View
G₁
Marking Code
EC XXX
Lot Traceability
and Date Code
Part # Code
S₁
N-Channel MOSFET
Ordering Information: Si5515DC-T1—E3
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol ^{5 secs Steady State 5 secs Steady State}
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
T_A = 25_C
T_A = 85_C
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
T_A = 25_C
T_A = 85_C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
−20
"8
5.9
4.4
−4.1
−3
4.2
3.1
−2.9
−2.2
20
−15
1.8
0.9
−1.8
−0.9
2.1
1.1
2.1
1.1
1.1
0.6
1.1
0.6
−55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 5 sec
50
Steady State
R_thJA
90
Steady State
R_thJF
30
60
110
_C/W
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72221
S-41167—Rev. B, 14-Jun-04
www.vishay.com
1