SI5515DC Datasheet, PDF (5/8 Pages) Vishay Siliconix – Complementary 20-V (D-S) MOSFET

Si5515DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
N−CHANNEL
0.2
0.1
0.1 _0.05
0.02
0.01
10^−4
Single Pulse
10^−3
2
1
Duty Cycle = 0.5
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 90_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^−2
10^−1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
100
600
0.2
0.1
0.1 _0.05
0.02
Single Pulse
0.01
10^−4
10^−3
10^−2
10^−1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
15
15
V_GS = 5 thru 3 V
12
2.5 V
12
9
9
2V
6
6
1
10
P-CHANNEL
Transfer Characteristics
T_C = −55_C
25_C
125_C
3
1.5 V
1V
0
0
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
Document Number: 72221
S-41167—Rev. B, 14-Jun-04
3
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS − Gate-to-Source Voltage (V)
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5