SI5515DC Datasheet, PDF (4/8 Pages) Vishay Siliconix – Complementary 20-V (D-S) MOSFET

Si5515DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.10
10
T_J = 150_C
T_J = 25_C
0.08
0.06
0.04
I_D = 2 A
I_D = 4.4 A
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Threshold Voltage
0.2
0.1
−0.0
I_D = 250 mA
−0.1
−0.2
−0.3
0.00
0
50
40
30
20
10
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
Single Pulse Power
−0.4
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
10^−4 10^−3
10^−2 10^−1
1
Time (sec)
10 100 600
Safe Operating Area
100
r_DS(on) Limited
I_DM Limited
10
P(t) = 0.0001
www.vishay.com
4
1
I_D(on)
Limited
P(t) = 0.001
P(t) = 0.01
0.1
0.01
T_A = 25_C
Single Pulse
BV_DSS Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
1000
Document Number: 72221
S-41167—Rev. B, 14-Jun-04