SI5515DC Datasheet, PDF (6/8 Pages) Vishay Siliconix – Complementary 20-V (D-S) MOSFET

Si5515DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.30
800
P-CHANNEL
Capacitance
0.25
0.20
V_GS = 1.8 V
0.15
0.10
0.05
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
3
6
9
12
15
I_D − Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 3 A
4
600
C_iss
400
200
C_oss
C_rss
0
0
4
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 3 A
1.4
3
1.2
2
1.0
1
0.8
0
012345678
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.4
10
T_J = 150_C
T_J = 25_C
0.3
I_D = 0.6 A
0.2
0.1
I_D = 3 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD − Source-to-Drain Voltage (V)
www.vishay.com
6
0.0
0
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
Document Number: 72221
S-41167—Rev. B, 14-Jun-04