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SI5515DC Datasheet, PDF (2/8 Pages) Vishay Siliconix – Complementary 20-V (D-S) MOSFET
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Si5515DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
VDS = VGS, ID = −250 mA
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = 0 V, VGS = "8 V
VDS = 20 V, VGS = 0 V
VDS = −20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 85_C
VDS = −20 V, VGS = 0 V, TJ = 85_C
VDS w 5 V, VGS = 4.5 V
VDS p −5 V, VGS = −4.5 V
VGS = 4.5 V, ID = 4.4 A
VGS = −4.5 V, ID = −3.0 A
VGS = 2.5 V, ID = 4.1 A
VGS = −2.5 V, ID = −2.5 A
VGS = 1.8 V, ID = 1.9 A
VGS = −1.8 V, ID = −0.6 A
VDS = 10 V, ID = 4.4 A
VDS = −10 V, ID = −3 A
IS = 0.9 A, VGS = 0 V
IS = −0.9 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 4.4 A
Qgs
P-Channel
VDS = −10 V, VGS = −4.5 V, ID = −3 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%,
b. Guaranteed by design, not subject to production testing.
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
P-Channel
VDD = −10 V, RL = 10 W
ID ^ −1 A, VGEN = −4.5 V, RG = 6 W
IF = 0.9 A, di/dt = 100 A/ms
IF = −0.9 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
P-Ch
0.4
−0.4
1.0
V
−1.0
N-Ch
P-Ch
"100
nA
"100
N-Ch
1
P-Ch
N-Ch
−1
mA
5
P-Ch
−5
N-Ch
20
A
P-Ch
−15
N-Ch
0.032 0.040
P-Ch
0.069 0.086
N-Ch
P-Ch
0.036 0.045
W
0.097 0.121
N-Ch
0.042 0.052
P-Ch
0.137 0.171
N-Ch
22
S
P-Ch
8
N-Ch
P-Ch
0.8
1.2
V
−0.8
−1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
7.5
5.5
8.5
0.85
nC
0.91
1
1.6
20
30
18
30
36
55
32
50
30
45
ns
42
65
12
20
26
40
45
90
30
60
www.vishay.com
2
Document Number: 72221
S-41167—Rev. B, 14-Jun-04
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