|
SI4505DY Datasheet, PDF (7/8 Pages) Vishay Siliconix – N- and P-Channel MOSFET | |||
|
◁ |
New Product
Si4505DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
PâCHANNEL
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.20
10
TJ = 150_C
TJ = 25_C
0.15
0.10
0.05
ID = 5 A
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
VSD â Source-to-Drain Voltage (V)
0.00
0
1
2
3
4
5
VGS â Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.3
ID = 250 mA
0.2
0.1
0.0
â0.1
Single Pulse Power, Junction-to-Ambient
100
80
60
40
20
â0.2
â50 â25
0 25 50 75 100 125 150
TJ â Temperature (_C)
0
0.0101
0.01
0.1
1
10
Time (sec)
Safe Operating Area
100
Limited
by rDS(on)
10
1 mS
1
TA = 25_C
Single Pulse
0.1
10 mS
100 mS
1S
10 S
dc
Document Number: 71826
S-20829âRev. A, 17-Jun-02
0.01
0.1
1
10
VDS â Drain-to-Source Voltage (V)
www.vishay.com
7
|
▷ |