SI4505DY Datasheet, PDF (4/8 Pages) Vishay Siliconix – N- and P-Channel MOSFET

Si4505DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
100
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
T_J = 150_C
10
T_J = 25_C
0.06
0.04
I_D = 7.8 A
0.02
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.2
I_D = 250 mA
–0.0
–0.2
–0.4
–0.6
Single Pulse Power, Junction-to-Ambient
100
80
60
40
20
–0.8
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.0101
0.01
0.1
1
10
Time (sec)
Safe Operating Area
100
Limited
by r_DS(on)
10
1 mS
www.vishay.com
4
1
10 mS
T_A = 25_C
Single Pulse
0.1
100 mS
1S
10 S
dc
0.01
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
Document Number: 71826
S-20829—Rev. A, 17-Jun-02