SI4505DY Datasheet, PDF (3/8 Pages) Vishay Siliconix – N- and P-Channel MOSFET

New Product
Si4505DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
40
V_GS = 10 thru 5 V
4V
32
32
N−CHANNEL
Transfer Characteristics
T_C = –55_C
25_C
24
24
16
16
3V
8
8
125_C
0
0
0.05
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
2000
Capacitance
0.04
0.03
0.02
0.01
V_GS = 4.5 V
V_GS = 10 V
0.00
0
6
6
12
18
24
30
I_D – Drain Current (A)
Gate Charge
5
V_DS = 15 V
I_D = 7.8 A
4
3
2
1
0
0
3
6
9
12
15
Q_g – Total Gate Charge (nC)
1600
C_iss
1200
800
C_oss
400
C_rss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
1.4
V_GS = 10 V
I_D = 7.8 A
1.2
1.0
0.8
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
Document Number: 71826
S-20829—Rev. A, 17-Jun-02
www.vishay.com
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