SI4505DY Datasheet, PDF (2/8 Pages) Vishay Siliconix – N- and P-Channel MOSFET

Si4505DY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 0 V, V_GS = "8 V
V_DS = 24 V, V_GS = 0 V
V_DS = –6.4 V, V_GS = 0 V
V_DS = 24 V, V_GS = 0 V, T_J = 55_C
V_DS = –6.4 V, V_GS = 0 V, T_J = 55_C
V_DS = 5 V, V_GS = 10 V
V_DS = –5 V, V_GS = –4.5 V
V_GS = 10 V, I_D = 7.8 A
V_GS = –4.5 V, I_D = –5.0 A
V_GS = 4.5 V, I_D = 6.4 A
V_GS = –2.5 V, I_D = –4.0 A
V_DS = 15 V, I_D = 7.8 A
V_DS = –15 V, I_D = –5.0 A
I_S = 1.8 A, V_GS = 0 V
I_S = –1.8 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
N-Channel
V_DS = 15 V, V_GS = 5 V, I_D = 7.8 A
Q_gs
P-Channel
V_DS = –4 V, V_GS = –5 V, I_D = –5.0 A
Q_gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t_d(on)
t_r
t_d(off)
t_f
N-Channel
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
P-Channel
V_DD = –4 V, R_L = 4 W
I_D ^ –1 A, V_GEN = –4.5 V, R_G = 6 W
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
I_F = 1.8 A, di/dt = 100 A/ms
Min Typ^a Max Unit
N-Ch
P-Ch
0.8
–0.45
1.8
V
1.0
N-Ch
P-Ch
"100
nA
"100
N-Ch
1
P-Ch
N-Ch
–1
mA
5
P-Ch
–5
N-Ch
20
A
P-Ch
–20
N-Ch
P-Ch
N-Ch
P-Ch
0.015 0.018
0.030 0.042
W
0.022 0.027
0.048 0.060
N-Ch
18
S
P-Ch
12
N-Ch
P-Ch
0.73
1.1
V
–0.75 –1.1
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
11.5
20
13.5
20
3
nC
2.2
4
3
15
25
21
40
8
15
45
70
35
55
ns
60
100
10
20
55
85
30
60
50
100
www.vishay.com
2
Document Number: 71826
S-20829—Rev. A, 17-Jun-02