SI4505DY Datasheet, PDF (6/8 Pages) Vishay Siliconix – N- and P-Channel MOSFET

Si4505DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
30
V_GS = 5 thru 3.5 V
32
24
3V
24
18
2.5 V
16
12
P−CHANNEL
Transfer Characteristics
T_C = –55_C
25_C
125_C
8
0
0
0.10
2V
1.5 V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS – Gate-to-Source Voltage (V)
2000
Capacitance
0.08
1600
C_iss
0.06
V_GS = 2.5 V
0.04
0.02
V_GS = 4.5 V
1200
800
C_rss
400
C_oss
0.00
0
6
5
10
15
20
25
I_D – Drain Current (A)
Gate Charge
5
V_DS = –4 V
I_D = 5 A
4
3
2
1
0
0
3
6
9
12
15
Q_g – Total Gate Charge (nC)
0
0
2
4
6
8
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
1.4
V_GS = 4.5 V
I_D = 5 A
1.2
1.0
0.8
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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6
Document Number: 71826
S-20829—Rev. A, 17-Jun-02