SI4505DY Datasheet, PDF (1/8 Pages) Vishay Siliconix – N- and P-Channel MOSFET

New Product
N- and P-Channel MOSFET
Si4505DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
N-Channel
30
P-Channel
–8
r_DS(on) (W)
0.018 @ V_GS = 10 V
0.027 @ V_GS = 4.5 V
0.042 @ V_GS = –4.5 V
0.060 @ V_GS = –2.5 V
I_D (A)
7.8
6.4
–5.0
–4.0
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Level Shift
D Load Switch
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
D₁
G₁
S₁
S₂
G₂
D₂
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol ^{10 sec. Steady State 10 sec. Steady State}
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
T_A = 25_C
T_A = 70_C
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
–8
"20
"8
7.8
6.0
–5.0
–3.8
6.0
5.2
–3.6
–3.0
30
–30
1.8
1.0
–1.8
1.0
2
1.20
2
1.2
1.3
0.75
1.3
0.75
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec
Document Number: 71826
S-20829—Rev. A, 17-Jun-02
t v 10 sec
Steady-State
Steady-State
Symbol
R_thJA
R_thJF
N-Channel
Typ
Max
50
62.5
85
105
30
40
P- Channel
Typ
Max
50
62.5
85
105
30
40
Unit
_C/W
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