SI4500DY Datasheet, PDF (7/7 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

New Product
Si4500DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 73_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 _0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
Single Pulse
0.01
10^–4
10^–3
10^–2
10^–1
1
10
Square Wave Pulse Duration (sec)
Document Number: 70880
S-00269—Rev. A, 26-Apr-99
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