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SI4500DY Datasheet, PDF (6/7 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel) | |||
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Si4500DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
5
VDS = 10 V
ID = 4.4 A
4
Gate Charge
P-CHANNEL
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
1.4
ID = 4.4 A
3
1.2
2
1.0
1
0.8
0
0
2
4
6
8
10
Qg â Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
10
TJ = 150_C
TJ = 25_C
0.6
â50 â25 0
25 50 75 100 125 150
TJ â Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
ID = 4.4 A
0.08
0.04
1
0
0.25 0.50 0.75 1.00 1.25 1.50
VSD â Source-to-Drain Voltage (V)
Threshold Voltage
0.6
0.4
0.2
ID = 250 mA
0.0
â0.2
0
0
1
2
3
4
5
VGS â Gate-to-Source Voltage (V)
Single Pulse Power, Juncion-To-Ambient
80
60
40
20
â0.4
â50 â25
0 25 50 75 100 125 150
TJ â Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
www.vishay.com S FaxBack 408-970-5600
2-6
Document Number: 70880
S-00269âRev. A, 26-Apr-99
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