SI4500DY Datasheet, PDF (6/7 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

Si4500DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
5
V_DS = 10 V
I_D = 4.4 A
4
Gate Charge
P-CHANNEL
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
1.4
I_D = 4.4 A
3
1.2
2
1.0
1
0.8
0
0
2
4
6
8
10
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
10
T_J = 150_C
T_J = 25_C
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
I_D = 4.4 A
0.08
0.04
1
0
0.25 0.50 0.75 1.00 1.25 1.50
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.6
0.4
0.2
I_D = 250 mA
0.0
–0.2
0
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power, Juncion-To-Ambient
80
60
40
20
–0.4
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
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2-6
Document Number: 70880
S-00269—Rev. A, 26-Apr-99