SI4500DY Datasheet, PDF (4/7 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

Si4500DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
N-CHANNEL
On-Resistance vs. Gate-to-Source Voltage
0.10
10
T_J = 150_C
T_J = 25_C
0.08
I_D = 4.5 A
0.06
0.04
0.02
0
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.4
I_D = 250 mA
0.2
–0.0
–0.2
–0.4
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power, Juncion-To-Ambient
80
60
40
20
–0.6
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 73_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70880
S-00269—Rev. A, 26-Apr-99