SI4500DY Datasheet, PDF (5/7 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

New Product
Si4500DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
N-CHANNEL
0.2
0.1
0.1 _0.05
0.02
Single Pulse
0.01
10^–4
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
3V
16
16
V_GS = 5, 4.5, 4, 3.5 V
2.5 V
12
12
8
2V
4
1.5 V
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
8
4
0
0
1500
1
10
P-CHANNEL
Transfer Characteristics
T_C = –55_C
125_C
25_C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS – Gate-to-Source Voltage (V)
Capacitance
0.16
1200
C_iss
0.12
V_GS = 2.5 V
V_GS = 2.7 V
900
0.08
0.04
V_GS = 4.5 V
0
0
4
8
12
16
20
I_D – Drain Current (A)
Document Number: 70880
S-00269—Rev. A, 26-Apr-99
600
C_oss
300
C_rss
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
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