SI4500DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

New Product
Si4500DY
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
V_DS (V)
N-Channel
20
P-Channel
–20
r_DS(on) (W)
0.030 @ V_GS = 4.5 V
0.040 @ V_GS = 2.5 V
0.065 @ V_GS = –4.5 V
0.100 @ V_GS = –2.5 V
I_D (A)
"7.0
"6.0
"4.5
"3.5
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8D
7D
6D
5D
S₂
G₂
D
G₁
S₁
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"12
"7.0
"5.5
"30
1.7
2.5
1.6
–55 to 150
–20
"12
"4.5
"3.5
"20
–1.7
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec
Document Number: 70880
S-00269—Rev. A, 26-Apr-99
t v 10 sec
Steady-State
Steady-State
Symbol
R_thJA
R_thJC
N-Channel
Typ Max
38
50
73
95
17
22
P- Channel
Typ Max
40
50
73
95
20
26
Unit
_C/W
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