IRFB20N50K Datasheet, PDF (7/8 Pages) International Rectifier – SMPS MOSFET

IRFB20N50K, SiHFB20N50K
Vishay Siliconix
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
-
+
R_G
• dV/dt controlled by R_G
+
• Driver same type as D.U.T.
• I_SD controlled by duty factor "D"
- ^VDD
• D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
V_GS = 10 V*
D.U.T. I_SD waveform
Reverse
recovery
Body diode forward
current
current
dI/dt
D.U.T. V_DS waveform
Diode recovery
dV/dt
V_DD
Re-applied
voltage
Body diode
Inductor current
forward drop
Ripple ≤ 5 %
I_SD
* V_GS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91101.
Document Number: 91101
S-Pending-Rev. A, 11-Aug-08
www.vishay.com
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