IRFB20N50K Datasheet, PDF (3/8 Pages) International Rectifier – SMPS MOSFET

IRFB20N50K, SiHFB20N50K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
VGS
Top 15 V
12 V
10 V
8.0 V
10
7.0 V
6.0 V
5.5 V
Bottom 5.0 V
100.0
10.0
1
1.0
TJ = 150 °C
TJ = 25 °C
0.1
5.0V
0.01
0.1
20 µs Pulse Width
T_J = 25 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
0.1
V_DS = 50 V
20 ms Pulse width
0.0
5.0
6.0
7.0
8.0
9.0
10.0
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
VGS
Top 15 V
12 V
10 V
8.0 V
10
7.0 V
6.0 V
5.5 V
Bottom 5.0 V
1
5.0V
0.1
0.01
0.1
20 µs Pulse Width
T_J = 25 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.5
ID = 20 A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
V _GS = 10 V
20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91101
S-Pending-Rev. A, 11-Aug-08
www.vishay.com
3