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IRFB20N50K Datasheet, PDF (2/8 Pages) International Rectifier – SMPS MOSFET
◁
IRFB20N50K, SiHFB20N50K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
58
-
0.45
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 12 Ab
VDS = 50 V, ID = 12 A
500
-
-
V
-
0.61
-
V/°C
3.0
-
5.0
V
-
-
± 100 nA
-
-
50
µA
-
-
250
-
0.21 0.25
Ω
11
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Ciss
Coss
Crss
Coss
Coss eff.
VGS = 0 V,
-
2870
-
VDS = 25 V,
-
320
-
f = 1.0 MHz, see fig. 5
-
34
-
pF
VDS = 1.0 V, f = 1.0 MHz
-
3480
-
VGS = 0 V VDS = 400 V, f = 1.0 MHz -
85
-
VDS = 0 V to 400 V
-
160
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
-
110
ID = 20 A, VDS = 400 V
Qgs
VGS = 10 V
see fig. 6 and 13b
-
-
33
nC
Qgd
-
-
54
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
td(on)
tr
td(off)
tf
-
22
-
VDD = 250 V, ID = 20 A
-
74
-
ns
RG = 7.5 Ω, VGS = 10 V, see fig. 10b
-
45
-
-
33
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
20
A
-
-
80
Body Diode Voltage
VSD
TJ = 25 °C, IS = 20 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
trr
-
TJ = 25 °C, IF = 20 A, dI/dt = 100 A/µsb
520
780
ns
Body Diode Reverse Recovery Charge
Qrr
-
5.3
8.0
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Pulse width ≤ 400 µs; duty cycle ≤ 2 %.
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Document Number: 91101
S-Pending-Rev. A, 11-Aug-08
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