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IRFB20N50K Datasheet, PDF (1/8 Pages) International Rectifier – SMPS MOSFET | |||
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IRFB20N50K, SiHFB20N50K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
110
33
54
Single
0.21
D
TO-220
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
⢠Low Gate Charge Qg Results in Simple Drive
Requirement
Available
⢠Improved Gate, Avalanche and Dynamic dV/dt RoHS*
Ruggedness
COMPLIANT
⢠Fully Characterized Capacitance and Avalanche Voltage
and Current
⢠Low RDS(on)
⢠Lead (Pb)-free Available
APPLICATIONS
⢠Switch Mode Power Supply (SMPS)
⢠Uninterruptible Power Supply
⢠High Speed Power Switching
⢠Hard Switched and High Frequency Circuits
TO-220
IRFB20N50KPbF
SiHFB20N50K-E3
IRFB20N50K
SiHFB20N50K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VDS
VGS
TC = 25 °C
VGS at 10 V
ID
TC = 100 °C
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
EAS
Repetitive Avalanche Currenta
IAR
Repetitive Avalanche Energya
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 °C, L = 1.6 mH, RG = 25 Ω, IAS = 20 A.
c. ISD ⤠20 A, dI/dt ⤠350 A/µs, VDD ⤠VDS, TJ ⤠150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91101
S-Pending-Rev. A, 11-Aug-08
WORK-IN-PROGRESS
LIMIT
500
± 30
20
12
80
2.2
330
20
28
280
6.9
- 55 to + 150
300d
10
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
N
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