IRFB20N50K Datasheet, PDF (4/8 Pages) International Rectifier – SMPS MOSFET

IRFB20N50K, SiHFB20N50K
Vishay Siliconix
100000
10000
1000
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds
shorted
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
C_oss
100
C_rss
10
1
10
100
V_DS, Drain-to-Source Voltage (V)
1000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100.0
10.0
T_J = 150 °C
1.0
T_J = 25 °C
0.1
0.2
0.4 0.6
V_GS = 0 V
0.8
1.0
1.2
V_SD, Source-to Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
?? ? ???
16
12
VDS = 400 V
VDS = 250 V
VDS = 100 V
8
4
For test circuit
see figure 13
0
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
Operation in this area limited
by r_DS(on)
10
100 µs
1 ms
1
T_C = 25 °C
T_J = 150 °C
Single Pulse
0.1
1
10
100
10 ms
1000 10000
V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91101
S-Pending-Rev. A, 11-Aug-08