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IRFB20N50K Datasheet, PDF (4/8 Pages) International Rectifier – SMPS MOSFET | |||
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IRFB20N50K, SiHFB20N50K
Vishay Siliconix
100000
10000
1000
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds
shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100.0
10.0
TJ = 150 °C
1.0
TJ = 25 °C
0.1
0.2
0.4 0.6
VGS = 0 V
0.8
1.0
1.2
VSD, Source-to Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
?? ? ???
16
12
VDS = 400 V
VDS = 250 V
VDS = 100 V
8
4
For test circuit
see figure 13
0
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
Operation in this area limited
by rDS(on)
10
100 µs
1 ms
1
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
1
10
100
10 ms
1000 10000
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91101
S-Pending-Rev. A, 11-Aug-08
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