IRFB20N50K Datasheet, PDF (5/8 Pages) International Rectifier – SMPS MOSFET

IRFB20N50K, SiHFB20N50K
Vishay Siliconix
20
16
12
8
4
0
25
50
75
100
125
150
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
V_DS
V_GS
R_G
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+
- ^VDD
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
D = 0.50
0.1
0.20
0.10
0.01
0.02
0.01
0.01
Single Pulse
(Thermal Response)
P _DM
t₁
t₂
Notes:
1. Duty Factor D = t₁/t₂
2. Peak TJ = PDM x TthJC + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
V_DS
L
Driver
R_G
20 V
t_p
D.U.T
I_AS
0.01 Ω
+
- ^VD^AD
A
A
Fig. 12a - Unclamped Inductive Test Circuit
V_DS
t_p
I_AS
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91101
S-Pending-Rev. A, 11-Aug-08
www.vishay.com
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