20MT120UFAPBF Datasheet, PDF (7/11 Pages) Vishay Siliconix – "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A

"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
20MT120UFAPbF
Vishay Semiconductors
40
35
30
25
20
15
10
0
200
400
600
800
1000
diF /dt (A/µs)
Fig. 19 - Typical Diode I_rr vs. dI_F/dt
V_CC = 400 V; V_GE = 15 V; I_CE = 5.0 A; T_J = 150 °C
3.0
2.5
5.0Ω
10 Ω
30A
2.0
30Ω
20A
1.5
50Ω
10A
1.0
0.5
0.0
0
200 400 600 800 1000 1200
diF /dt (A/µs)
Fig. 20 - Typical Diode Q_rr
V_CC = 400 V; V_GE = 15 V; T_J = 150 °C
1
0.1
0.01
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D =0.01
0.001
Single Pulse
(Thermal Response)
10000
1000
100
Cies
Coes
Cres
10
0
20
40
60
80
100
VCE (V)
Fig. 21 - Typical Capacitance vs. V_CE
V_GE = 0 V; f = 1 MHz
16
14
600V
12
10
8
6
4
2
0
0
40
80
120 160 200
Q _G, Total Gate Charge (nC)
Fig. 22 - Typical Gate Charge vs. V_GE
I_CE = 5.0 A; L = 600 μH
0.0001
0.000001 0.00001 0.0001 0.001
0.01
0.1
1
10
t₁, Rectangular Pulse Duration (sec)
Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
Document Number: 94470 For technical questions within your region, please contact one of the following:
Revision: 03-Aug-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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