20MT120UFAPBF Datasheet, PDF (5/11 Pages) Vishay Siliconix – "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A

"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
20MT120UFAPbF
Vishay Semiconductors
100
VGE = 18V
VGE = 15V
80 VGE = 12V
VGE = 10V
VGE = 8.0V
60
40
20
0
0
2
4
6
8
10
VCE (V)
Fig. 7 - Typical IGBT Output Characteristics
T_J = 125 °C; t_p = 80 μs
120
-40°C
100
25°C
125°C
80
60
40
20
0
0.0
1.0
2.0
3.0
4.0
5.0
VF (V)
Fig. 8 - Typical Diode Forward Characteristics
t_p = 80 μs
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 40A
ICE = 20A
ICE = 10A
10
15
20
VGE (V)
Fig. 9 - Typical V_CE vs. V_GE
T_J = - 40 °C
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 10A
ICE = 20A
ICE = 40A
10
15
20
VGE (V)
Fig. 10 - Typical V_CE vs. V_GE
T_J = 25 °C
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 10A
ICE = 20A
ICE = 40A
10
15
20
VGE (V)
Fig. 11 - Typical V_CE vs. V_GE
T_J = 125 °C
300
250
TJ = 25°C
TJ = 150°C
200
150
100
50
0
0
5
10
15
20
VGE (V)
Fig. 12 - Typical Transfer Characteristics
V_CE = 50 V; t_p = 10 μs
Document Number: 94470 For technical questions within your region, please contact one of the following:
Revision: 03-Aug-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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