20MT120UFAPBF Datasheet, PDF (2/11 Pages) Vishay Siliconix – "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A

20MT120UFAPbF
Vishay Semiconductors
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
V_(BR)CES
Temperature coefficient of breakdown voltage V_(BR)CES/T_J
V_GE = 0 V, I_C = 250 μA
V_GE = 0 V, I_C = 3 mA (25 to 125 °C)
V_GE = 15 V, I_C = 20 A
V_GE = 15 V, I_C = 40 A
Collector to emitter saturation voltage
V_CE(on)
V_GE = 15 V, I_C = 20 A, T_J = 125 °C
V_GE = 15 V, I_C = 40 A, T_J = 125 °C
V_GE = 15 V, I_C = 20 A, T_J = 150 °C
Gate threshold voltage
Temperature coefficient of threshold voltage
V_GE(th)
V_GE(th)/T_J
V_CE = V_GE, I_C = 250 μA
V_CE = V_GE, I_C = 3 mA (25 to 125 °C)
Transconductance
g_fe
V_CE = 50 V, I_C = 20 A, PW = 80 μs
Zero gate voltage collector current
I_CES ⁽¹⁾
V_GE = 0 V, V_CE = 1200 V, T_J = 25 °C
V_GE = 0 V, V_CE = 1200 V, T_J = 125 °C
V_GE = 0 V, V_CE = 1200 V, T_J = 150 °C
Gate to emitter leakage current
I_GES
Note
(1) _{ICES includes also opposite leg overall leakage}
V_GE = ± 20 V
MIN.
1200
-
-
-
-
-
-
4
-
-
-
-
-
-
TYP.
-
+ 1.3
3.29
4.42
3.87
5.32
3.99
-
- 14
17.5
-
0.7
2.9
-
MAX. UNITS
-
V
-
V/°C
3.59
4.66
4.11
V
5.70
4.27
6
- mV/°C
-
S
250 μA
3.0
mA
9.0
± 250 nA
SWITCHING CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Reverse bias safe operating area
Short circuit safe operating area
Q_g
Q_ge
Q_gc
E_on
E_off
E_tot
E_on
E_off
E_tot
C_ies
C_oes
C_res
RBSOA
SCSOA
I_C = 20 A
V_CC = 600 V
V_GE = 15 V
V_CC = 600 V, I_C = 20 A, V_GE = 15 V,
R_g = 5 , L = 200 μH, T_J = 25 °C,
energy losses include tail and
diode reverse recovery
V_CC = 600 V, I_C = 20 A, V_GE = 15 V,
R_g = 5 , L = 200 μH, T_J = 125 °C,
energy losses include tail and
diode reverse recovery
V_GE = 0 V
V_CC = 30 V
f = 1.0 MHz
T_J = 150 °C, I_C = 120 A
V_CC = 1000 V, V_p = 1200 V
R_g = 5 , V_GE = + 15 V to 0 V
T_J = 150 °C
V_CC = 900 V, V_p = 1200 V
R_g = 5 , V_GE = + 15 V to 0 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
176
19
89
0.513
0.402
0.915
0.930
0.610
1.540
2530
344
78
MAX. UNITS
264
30
nC
134
0.770
0.603
1.373
mJ
1.395
0.915
2.310
3790
516 pF
117
Fullsquare
10
-
-
μs
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94470
[e-mail], [e-mail], [e-mail]
Revision: 03-Aug-10