20MT120UFAPBF Datasheet, PDF (6/11 Pages) Vishay Siliconix – "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A

20MT120UFAPbF
Vishay Semiconductors
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
2400
2000
1600
EON
1200
800
EOFF
400
0
0
10
20
30
40
50
IC (A)
Fig. 13 - Typical Energy Loss vs. I_C
T_J = 150 °C; L = 1.4 mH; V_CE = 400 V
R_g = 5 ; V_GE = 15 V
1000
tdOFF
tF
100
tdON
tR
10
0
10
20
30
40
50
60
RG (Ω)
Fig. 16 - Typical Switching Time vs. R_g
T_J = 150 °C; L = 1.4 mH; V_CE = 400 V
I_CE = 5.0A; V_GE = 15 V
1000
tdOFF
100
tF
tdON
tR
10
0
10
20
30
40
50
IC (A)
Fig. 14 - Typical Switching Time vs. I_C
T_J = 150 °C; L = 1.4 mH; V_CE = 400 V
R_g = 100 ; V_GE = 15 V
40
RG ₌ 5.0Ω
30
RG ₌₁₀ Ω
20
RG ₌₃₀ Ω
RG ₌₅₀ Ω
10
0
0
5
10
15
20 25 30
35
IF (A)
Fig. 17 - Typical Diode I_rr vs. I_F
T_J = 150 °C
2000
40
1600
EON
30
1200
EOFF
20
800
10
400
0
0
10
20
30
40
50
60
RG (Ω)
Fig. 15 - Typical Energy Loss vs. R_g
T_J = 150 °C; L = 1.4 mH; V_CE = 400 V
I_CE = 5.0A; V_GE = 15 V
0
0
10
20
30
40
50
60
RG (Ω)
Fig. 18 - Typical Diode I_rr vs. R_g
T_J = 150 °C; I_F = 5.0 A
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Revision: 03-Aug-10