20MT120UFAPBF Datasheet, PDF (4/11 Pages) Vishay Siliconix – "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A

20MT120UFAPbF
Vishay Semiconductors
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
160
140
DC
120
100
80
60
40
0
5 10 15 20 25
I_C (A)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case Temperature
1000
100
10 µs
10
100 µs
1
1ms
DC
0.1
0.01
1
10
100
1000
VCE (V)
Fig. 3 - Forward SOA
T_C = 25 °C; T_J  150 °C
10000
1000
100
10
1
10
100
1000
VCE (V)
10000
Fig. 4 - Reverse Bias SOA
T_J = 150 °C; V_GE = 15 V
100
VGE = 18V
VGE = 15V
80 ^{VGE = 12V}
VGE = 10V
VGE = 8.0V
60
40
20
0
0
2
4
6
8
10
VCE (V)
Fig. 5 - Typical IGBT Output Characteristics
T_J = - 40 °C; t_p = 80 μs
100
VGE = 18V
VGE = 15V
80 ^{VGE = 12V}
VGE = 10V
VGE = 8.0V
60
40
20
0
0
2
4
6
8
10
VCE (V)
Fig. 6 - Typical IGBT Output Characteristics
T_J = 25 °C; t_p = 80 μs
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Revision: 03-Aug-10