20MT120UFAPBF Datasheet, PDF (3/11 Pages) Vishay Siliconix – "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A

"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
DIODE SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Diode forward voltage drop
I_C = 20 A
I_C = 40 A
V_FM
I_C = 20 A, T_J = 125 °C
I_C = 40 A, T_J = 125 °C
I_C = 20 A, T_J = 150 °C
Reverse recovery energy of the diode E_rec
Diode reverse recovery time
t_rr
Peak reverse recovery current
I_rr
V_GE = 15 V, R_g = 5 , L = 200 μH
V_CC = 600 V, I_C = 20 A
T_J = 125 °C
20MT120UFAPbF
Vishay Semiconductors
MIN.
-
-
-
-
-
-
-
-
TYP.
2.48
3.28
2.44
3.45
2.21
420
98
33
MAX. UNITS
2.94
3.90
2.84 V
4.14
2.93
630 μJ
150 ns
50
A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNITS
Operating junction temperature range
Storage temperature range
Junction to case
IGBT
Diode
T_J
T_Stg
R_thJC
- 40
-
150
°C
- 40
-
125
-
0.53 0.64
-
0.69 0.83 °C/W
Case to sink per module
Clearance
Creepage
Mounting torque
Weight
R_thCS
Heatsink compound thermal conductivity = 1 W/mK -
0.06
-
External shortest distance in air between 2 terminals 5.5
-
Shortest distance along external surface of the
insulating material between 2 terminals
8
-
-
mm
-
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
3 ± 10 %
Nm
the spread of the compound. Lubricated threads.
66
g
Document Number: 94470 For technical questions within your region, please contact one of the following:
Revision: 03-Aug-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
3