VS-GP250SA60S Datasheet, PDF (6/9 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A

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50 V
VS-GP250SA60S
Vishay Semiconductors
L
Driver*
V_C
1000 V
1
2
I_C
D.U.T.
3
* Driver same type as D.U.T., V_C = 480 V
Fig. 17a - Switching Lost Test Circuit
1
2
3
V_C
90 %
10 %
5%
I_C
10 %
90 %
t_{d (off)}
t_r
t_f
t_{d (on)}
E_on
E_off
E_ts = (E_on + E_off)
Fig. 17b - Switching Loss Waveforms
t = 5 µs
ORDERING INFORMATION TABLE
Device code _{VS- G P 250 S A 60 S}
1
2
3
4
5
6
7
8
1 - Vishay Semiconductors product
2 - Insulated Gate Bipolar Transistor (IGBT)
3 - P = Trench PT IGBT
4 - Current rating (250 = 250 A)
5 - Circuit configuration (S = single switch, no diode)
6 - Package indicator (A = SOT-227)
7 - Voltage rating (60 = 600 V)
8 - Speed/type (S = standard speed)
Revision: 31-May-16
6
Document Number: 95766
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