VS-GP250SA60S Datasheet, PDF (2/9 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A

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VS-GP250SA60S
Vishay Semiconductors
SWITCHING CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Q_g
Gate to emitter charge (turn-on)
Q_ge
I_C = 100 A, V_CC = 400 V, V_GE = 15 V
Gate to collector charge (turn-on)
Q_gc
Turn-on switching loss
E_on
Turn-off switching loss
E_off
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
E_tot
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_tot
t_d(on)
t_r
I_C = 100 A, V_CC = 480 V,
V_GE = 15 V, R_g = 5 
L = 500 μH, T_J = 25 °C
Energy losses
include tail
and diode
recovery.
diode used
60APH06
I_C = 100 A, V_CC = 480 V,
V_GE = 15 V, R_g = 5  
L = 500 μH, T_J = 125 °C
Turn-off delay time
Fall time
Reverse bias safe operating area
t_d(off)
t_f
RBSOA
T_J = 150 °C, I_C = 400, R_g = 5 
V_GE = 15 V to 0 V, V_CC = 480 V,
V_P = 600 V, L = 500 μH
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
942
295
802
2.2
11
13.2
300
85
515
450
2.6
21.5
24.1
285
85
785
790
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
UNITS
nC
mJ
ns
mJ
ns
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction and storage temperature range
Junction to case
Case to heatsink
Weight
T_J, T_Stg
R_thJC
R_thCS
Flat, greased surface
Mounting torque
Torque to terminal
Torque to heatsink
Case style
MIN.
TYP.
-40
-
-
-
-
0.1
-
30
-
-
-
-
SOT-227
MAX.
150
0.14
-
-
1.1 (9.7)
1.3 (11.5)
UNITS
°C
°C/W
g
Nm (lbf.in)
Nm (lbf.in)
Revision: 31-May-16
2
Document Number: 95766
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