VS-GP250SA60S Datasheet, PDF (3/9 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A

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160
140
120
100
DC
80
60
40
20
0
0
100
200
300
400
I_C - Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature
350
V_GE = 15V
300
250
200
150
T_J = 150 °C
100
50
T_J = 25 °C
T_J = 125 °C
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V_CE (V)
Fig. 2 - Typical IGBT Output Characteristics vs. V_GE = 15 V
350
300
V_GE = 18 V
V_GE = 15 V
250
200
150
V_GE = 12 V
100
V_GE = 9 V
50
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_CE (V)
Fig. 3 - Typical Output Characteristics vs. V_GE at 25 °C
VS-GP250SA60S
Vishay Semiconductors
350
V_GE = 18 V
300
V_GE = 15 V
250
200
V_GE = 12 V
150
100
V_GE = 9 V
50
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_CE (V)
Fig. 4 - Typical Output Characteristics vs. V_GE at 125 °C
350
V_GE = 18 V
300
V_GE = 15 V
250
200
V_GE = 12 V
150
100
V_GE = 9 V
50
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_CE (V)
Fig. 5 - Typical Output Characteristics vs. V_GE at 150 °C
8
7
T_J = 25 °C
6
5
4
T_J = 125 °C
3
2
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
I_C (mA)
Fig. 6 - Typical Gate Threshold Voltage Characteristics
Revision: 31-May-16
3
Document Number: 95766
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