VS-GP250SA60S Datasheet, PDF (5/9 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A

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1
VS-GP250SA60S
Vishay Semiconductors
0.1
0.75
0.01
0.50
0.25
0.10
0.05
0.02
DC
0.001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (s)
Fig. 13 - Maximum Thermal Impedance Characteristics
16
Vcc = 400V
14 _{Ic = 100 A}
12
10
8
6
4
2
0
0
200
400
600
800 1000
Q_G (nC)
Fig. 14 - Typical Gate Charge vs. Gate Emitter Voltage
50 V
1000 V
L
V_C*
D.U.T.
1
2
* Driver same type as D.U.T.; V_C = 80 % of V_CE (max)
Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated I_d
Fig. 16a - Clamped Inductive Load Test Circuit
1000
100
10
0 V to 480 V
R_L =
480 V
4 x I_C at 25 °C
480 µF
960 V
1
0.1
1
10
100
1000
V_CE (V)
Fig. 15 - Reverse BIAS SOA, T_J = 150 °C, V_GE = 15 V
Fig. 16b - Pulsed Collector Current Test Circuit
Revision: 31-May-16
5
Document Number: 95766
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