VS-GP250SA60S Datasheet, PDF (4/9 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A

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VS-GP250SA60S
Vishay Semiconductors
10
1
0.1
0.01
0.001
T_J = 150 °C
T_J = 125 °C
T_J = 25 °C
1
t_d(on)
0.1
t_r
t_d(off)
t_f
0.0001
100
200
300
400
500
600
V_CE (V)
Fig. 7 - Typical Zero Voltage Collector Current
1.5
1.4
1.3
200 A
1.2
1.1
100 A
1.0
0.9
0.8
0.7
20 40 60 80 100 120 140 160
T_J (°C)
Fig. 8 - Typical V_CE vs. Junction Temperature
50.0
0.01
25 50 75 100 125 150 175 200 225
I_C (A)
Fig. 10 - Typical IGBT Switching Time vs. I_C
T_J = 125 °C, V_CC = 480 V, V_GE = 15 V, L = 500 μH, R_g = 5 
Diode used: 60APH06
60
50
E_off
40
30
20
10
E_on
0
0
10
20
30
40
50
60
R_g (Ω)
Fig. 11 - Typical IGBT Energy Losses vs. R_g
T_J = 125 °C, I_C = 200 A, V_CC = 480 V, V_GE = 15 V, L = 500 μH,
R_g = 5 , Diode used: 60APH06
10
40.0
30.0
E_off
20.0
10.0
E_on
0
0 25 50 75 100 125 150 175 200 225
I_C (A)
Fig. 9 - Typical IGBT Energy Losses vs. I_C
T_J = 125 °C, V_CC = 480 V, V_GE = 15 V, L = 500 μH, R_g = 5 
Diode used: 60APH06
t_d(off)
1
t_f
t_r
t_d(on)
0.1
0
10
20
30
40
50
60
R_g (Ω)
Fig. 12 - Typical IGBT Switching Time vs. R_g
T_J = 125 °C, I_C = 200 A, V_CC = 480 V, V_GE = 15 V, L = 500 μH,
R_g = 5  Diode used: 60APH06
Revision: 31-May-16
4
Document Number: 95766
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