VS-GP250SA60S Datasheet, PDF (1/9 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A

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VS-GP250SA60S
Vishay Semiconductors
Insulated Gate Bipolar Transistor
Trench PT IGBT, 600 V, 250 A
Proprietary Vishay IGBT Silicon “L Series”
SOT-227
PRODUCT SUMMARY
V_CES
I_C DC ⁽¹⁾
V_CE(on) typical at 100 A, 25 °C
Speed
Package
600 V
239 A at 90 °C
1.10 V
DC to 1 kHz
SOT-227
Circuit
Single switch no diode
Note
(1) _{Maximum continuous collector current 100 A to do not exceed}
the maximum temperature of terminals
FEATURES
• Standard speed Trench PT IGBT
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for high current inverter stages (AC TIG welding
machine)
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Lower conduction losses
• Low EMI, requires less snubbing

ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
I_CM
Clamped inductive load current
I_LM
Gate-to-emitter voltage
V_GE
Power dissipation, IGBT
P_D
Isolation voltage
V_ISOL
TEST CONDITIONS
T_C = 25 °C
T_C = 90 °C
T_C = 25 °C
T_C = 90 °C
Any terminal to case, t = 1 min
MAX.
600
380
239
600
400
± 20
893
429
2500
UNITS
V
A
V
W
V
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
V_BR(CES)
V_CE(on)
V_GE(th)
V_GE(th)/T_J
V_GE = 0 V, I_C = 250 μA
V_GE = 15 V, I_C = 100 A
V_GE = 15 V, I_C = 100 A, T_J = 125 °C
V_GE = 15 V, I_C = 100 A, T_J = 150 °C
V_CE = V_GE, I_C = 3.2 mA
V_CE = V_GE, I_C = 3.2 mA, T_J = 125 °C
V_CE = V_GE, I_C = 3.2 mA, (25 °C to 125 °C)
Collector to emitter leakage current
Gate to emitter leakage current
V_GE = 0 V, V_CE = 600 V
I_CES
V_GE = 0 V, V_CE = 600 V, T_J = 125 °C
V_GE = 0 V, V_CE = 600 V, T_J = 150 °C
I_GES
V_GE = ± 20 V
MIN.
600
-
-
-
4.1
-
-
-
-
-
-
TYP.
-
1.10
1.03
1.0
6.1
3.5
-26
1.0
350
700
-
MAX.
-
1.30
-
-
8.1
-
-
100
-
-
± 350
UNITS
V
mV/°C
μA
nA
Revision: 31-May-16
1
Document Number: 95766
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000