SUP60N10-18P Datasheet, PDF (6/7 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

SUP60N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65003.
www.vishay.com
6
Document Number: 65003
S09-1096-Rev. A, 15-Jun-09