SUP60N10-18P Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
Limited by R_DS(on)*
10
1
10 µs
100 µs
1 ms
10 ms, DC
SUP60N10-18P
Vishay Siliconix
0.1
T_C = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
180
75
150
60
120
45
90
30
60
15
30
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Power Derating, Junction-to-Case
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Current Derating*
* The power dissipation P_D is based on T_J(max.) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65003
S09-1096-Rev. A, 15-Jun-09
www.vishay.com
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