SUP60N10-18P Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

SUP60N10-18P
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
100
0.0183 at V_GS = 10 V
0.023 at V_GS = 8.0 V
I_D (A)
60
53
Q_g (Typ.)
48
TO-220AB
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Industrial
• Power Supply
D
GD S
Top View
Ordering Information: SUP60N10-18P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
100
V
V_GS
± 20
Continuous Drain Current (T_J = 175 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
I_D
60
50
A
I_DM
100
Avalanche Current
I_AS
45
Single Avalanche Energy^a
L = 0.1 mH
E_AS
101
mJ
Maximum Power Dissipation^a
T_C = 25 °C
150^b
T_A = 25 °C^c
P_D
3.75
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^c
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
Symbol
R_thJA
R_thJC
Limit
40
1.0
Unit
°C/W
Document Number: 65003
S09-1096-Rev. A, 15-Jun-09
www.vishay.com
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