SUP60N10-18P Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
1.5
V_GS = 10 V thru 8 V
80
1.2
V_GS = 7 V
60
0.9
SUP60N10-18P
Vishay Siliconix
40
20
V_GS = 6 V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
75
0.6
T_C = 25 °C
0.3
T_C = 125 °C
T_C = - 55 °C
0.0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.04
60
T_C = - 55 °C
45
T_C = 25 °C
30
15
T_C = 125 °C
0.03
0.02
0.01
V_GS = 8 V
V_GS = 10 V
0
0
3500
10
20
30
40
50
I_D - Drain Current (A)
Transconductance
2800
C_iss
2100
1400
700
C_rss
C_oss
0
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 65003
S09-1096-Rev. A, 15-Jun-09
0.00
0
20
15
10
20
40
60
80
100 120
I_D - Drain Current (A)
On-Resistance vs. Drain Current
I_D = 15 A
V_DS = 50 V
V_DS = 80 V
5
0
0
20
40
60
80
100
Q_g - Total Gate Charge (nC)
Gate Charge
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