SUP60N10-18P Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

SUP60N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.5
100
I_D = 15 A
2.0
V_GS = 10 V
10
V_GS = 8 V
1
1.5
0.1
1.0
0.01
T_J = 150 °C
T_J = 25 °C
0.5
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
0.08
I_D = 15 A
0.06
0.04
T_J = 150 °C
0.02
T_J = 25 °C
0.00
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
130
I_D = 1 mA
125
120
115
110
105
100
95
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.7
0.2
- 0.3
- 0.8
- 1.3
- 1.8
I_D = 5 mA
I_D = 250 µA
- 2.3
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
100
10 _{TJ = 150 °C}
T_J = 25 °C
1
10^-5
10^-4
10^-3
10^-2
10^-1
1
t_AV (s)
Avalanche Current vs. Time
www.vishay.com
4
Document Number: 65003
S09-1096-Rev. A, 15-Jun-09